Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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MURF860 TO-220F-2L

8A, 600V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications.
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  • MURF860

  • WXDH

8A 600V Fast recovery diode


1 Description

8A, 600V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink. TO-220F series comply with UL standards (File ref:E252906). 


2 Features 

 Low power loss, 

 high efficiency Low forward voltage, 

 high current capability High surge capacity 

 Super fast recovery times 

 high voltage 


3 Applications 

 Switching Power Supply 

 Power Switching Circuits 

 General Purpose



VBRVF(single)(MAX)IF(AV)(single)
600V1.6V8A



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