Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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80A 600V Fast recovery diode MUR8060FCT TO-3PF

80A, 600V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial
construction.
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  • MUR8060FCT

  • WXDH

80A 600V Fast recovery diode


1 Description

80A, 600V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor 


2 Features 

 Low power loss, 

 high efficiency Low forward voltage, 

 high current capability High surge capacity 

 Super fast recovery times 

 high voltage 


3 Applications 

 Switching Power Supply 

 Power Switching Circuits 

 General Purpose


VBRVF(single)(MAX)IF(AV)(single)
600V1.8V40A



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