Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
You are here: Home » Products » MOSFET » 400V-1500V N MOS » Insulated Gate Bipolar Transistor

loading

Share to:
facebook sharing button
twitter sharing button
line sharing button
wechat sharing button
linkedin sharing button
pinterest sharing button
whatsapp sharing button
sharethis sharing button

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor
Availability:
Quantity:
  • DHG50T65D

  • WXDH

Insulated Gate Bipolar Transistor

1 Description 


Using DongHai's proprietary Planar design and advanced FS technology, the 650V FS IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. 


2 Features 

  • FS Trench Technology, Positive temperature coefficient 

  • Low saturation voltage: VCE(sat), typ = 1.9V @ IC =50A and TC = 25°C 

  • Extremely enhanced avalanche capability 


3 Applications

  • Aircondition

  • Welding

  • UPS

VcesPtot (TC=25℃)Ic
650V280W50A


Previous: 
Next: 

Product Category

Latest News

  • Jiangsu Donghai Semiconductor Co., Ltd
  • Sign up for our newsletter
  • get ready for the future
    sign up for our newsletter to get updates straight to your inbox