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85V/2.9mΩ/215AN-MOSFET DH025N08 TO-220C

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
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85V/2.9mΩ/215A N-MOSFET


1 Description 

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 


2 Features 

● Fast switching

● Low on resistance 

● Low reverse transfer capacitances

• Low gate charge

● 100% single pulse avalanche energy test

● 100% ΔVDS test 

  • High avalanche current


3 Applications 

● Motor Control and Drive

● Charge/Discharge for Battery Management System

● Synchronous Rectifier for SMPS



VDSS RDS(on)(TYP) ID
85V 2.9mΩ 215A


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