Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
You are here: Home » Products » MOSFET » 400V-1500V N MOS » 7A 650V N-channel Enhancement Mode Power MOSFET 7N65 TO-220C

loading

Share to:
facebook sharing button
twitter sharing button
line sharing button
wechat sharing button
linkedin sharing button
pinterest sharing button
whatsapp sharing button
sharethis sharing button

7A 650V N-channel Enhancement Mode Power MOSFET 7N65 TO-220C

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
Availability:
Quantity:

7A 650V N-channel Enhancement Mode Power MOSFET


1 Description 

These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 


2 Features 

● Fast Switching 

● ESD Improved Capability 

● Low ON Resistance(Rdson≤1.45Ω) 

● Low Gate Charge(Typ: 24nC) 

● Low Reverse Transfer Capacitances(Typ: 5.5pF) 

● 100% Single Pulse Avalanche Energy Test 

● 100% ΔVDS Test 


3 Applications 

● used in various power switching circuit for system miniaturization and higher efficiency. 

● Power switch circuit of electron ballast and adaptor.



VDSS RDS(on)(TYP) ID
650V 1.25Ω 7A


Previous: 
Next: 
  • Sign up for our newsletter
  • get ready for the future
    sign up for our newsletter to get updates straight to your inbox