Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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68V/7.2mΩ/80A N-MOSFET DTD080N07N TO-252B

These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
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  • DTD080N07N

  • WXDH

68V/7.2mΩ/80A N-MOSFET


1 Description 

These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 


Features 

• Low on resistance 

• Low reverse transfer capacitances

• 100% single pulse avalanche energy test

• 100% ΔVDS test 

• Pb-Free plating / Halogen-Free / RoHS compliant 


Applications 

• Motor Control and Drive

• Charge/Discharge for Battery Management System 

• Synchronous Rectifier for SMPS


VDSS RDS(on)(TYP) ID
68V 7.2mΩ 80A


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