Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
You are here: Home » Products » MOSFET » 12V-300V N MOS » 68V/7.2mΩ/80A N-MOSFET DTD080N07N TO-252B

loading

Share to:
facebook sharing button
twitter sharing button
line sharing button
wechat sharing button
linkedin sharing button
pinterest sharing button
whatsapp sharing button
sharethis sharing button

68V/7.2mΩ/80A N-MOSFET DTD080N07N TO-252B

These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
Availability:
Quantity:

68V/7.2mΩ/80A N-MOSFET


1 Description 

These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 


Features 

• Low on resistance 

• Low reverse transfer capacitances

• 100% single pulse avalanche energy test

• 100% ΔVDS test 

• Pb-Free plating / Halogen-Free / RoHS compliant 


Applications 

• Motor Control and Drive

• Charge/Discharge for Battery Management System 

• Synchronous Rectifier for SMPS


VDSS RDS(on)(TYP) ID
68V 7.2mΩ 80A


Previous: 
Next: 
  • Sign up for our newsletter
  • get ready for the future
    sign up for our newsletter to get updates straight to your inbox