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DTD080N07N
WXDH
68V/7.2mΩ/80A N-MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
Features
• Low on resistance
• Low reverse transfer capacitances
• 100% single pulse avalanche energy test
• 100% ΔVDS test
• Pb-Free plating / Halogen-Free / RoHS compliant
Applications
• Motor Control and Drive
• Charge/Discharge for Battery Management System
• Synchronous Rectifier for SMPS
| VDSS | RDS(on)(TYP) | ID |
| 68V | 7.2mΩ | 80A |
68V/7.2mΩ/80A N-MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
Features
• Low on resistance
• Low reverse transfer capacitances
• 100% single pulse avalanche energy test
• 100% ΔVDS test
• Pb-Free plating / Halogen-Free / RoHS compliant
Applications
• Motor Control and Drive
• Charge/Discharge for Battery Management System
• Synchronous Rectifier for SMPS
| VDSS | RDS(on)(TYP) | ID |
| 68V | 7.2mΩ | 80A |
