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| Quantity: | |
|---|---|
B4N65
WXDH
4A 650V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced vdmosfets,is obtained by the self-aligned planar technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2Features
●Fast switching
●ESD improved capability
●Low on resistance(Rdson≤2.8Ω)
●Low gate charge(Typ:14.5nC)
●Low reverse transfer capacitances(Typ:3.5pF)
●100% single pulse avalanche energy test
●100% ΔVDS test
3Applications
●Used in various power switching circuit for system miniaturization and higher efficiency.
●Power switch circuit of electron ballast and adaptor.
| VDSS | ID | RDS(on)（TYP) |
| 650V | 4.0A | 2.4Ω |
4A 650V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced vdmosfets,is obtained by the self-aligned planar technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2Features
●Fast switching
●ESD improved capability
●Low on resistance(Rdson≤2.8Ω)
●Low gate charge(Typ:14.5nC)
●Low reverse transfer capacitances(Typ:3.5pF)
●100% single pulse avalanche energy test
●100% ΔVDS test
3Applications
●Used in various power switching circuit for system miniaturization and higher efficiency.
●Power switch circuit of electron ballast and adaptor.
| VDSS | ID | RDS(on)（TYP) |
| 650V | 4.0A | 2.4Ω |
