Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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4A 650V N-channel Enhancement Mode Power MOSFET B4N65 TO-251

4A 650V N-channel Enhancement Mode Power MOSFET
Availability:
Quantity:
  • B4N65

  • WXDH

4A 650V N-channel Enhancement Mode Power MOSFET


1 Description

These N-channel enhanced vdmosfets,is obtained by the self-aligned planar technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard. 


2Features 

●Fast switching 

●ESD improved capability

●Low on resistance(Rdson≤2.8Ω) 

●Low gate charge(Typ:14.5nC) 

●Low reverse transfer capacitances(Typ:3.5pF) 

●100% single pulse avalanche energy test 

●100% ΔVDS test 


3Applications

●Used in various power switching circuit for system miniaturization and higher efficiency. 

●Power switch circuit of electron ballast and adaptor.


VDSS ID RDS(on)(TYP)
650V 4.0A 2.4Ω



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