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4a 650v N-Channel Enhancement Modus Power Mosfet B4N65 ad-CCLI

4A 650v N-Channel Enhancement Modus Power Mosfet
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4a 650v N-Channel Enhancement Modus Power Mosfet


I Description

Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum. 


2features 

● Fast Switching 

● ESD improved facultatem

● humilis in resistentia (rdson≤2.8Ω) 

● Minimum porta (Typ, 14.5nc) 

● Low Reverse Transfer Capitances (Typ: 3.5pf) 

● C% unum pulsus Copyops Nectrix Energy Test 

● C% Δvds test 


3Applications

● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam. 

● Power SWITCH CIRCUPTURA electron SADIO et nibh.





Vdss Id RDS (on) (Typ)
650v 4.0a 2.4Ω



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4a 650v N-Channel Enhancement Modus Power Mosfet
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