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DHS044N12E
WXDH
160A 120V N-channel Enhancement Mode Power MOSFET
1 Description
The N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Synchronous rectification in SMPS
● Motor control and drive
● Battery management
● UPS
● Power tools
| VDSS | RDS(on)(TYP) | ID |
| 120V | 3.7mΩ | 160A |
160A 120V N-channel Enhancement Mode Power MOSFET
1 Description
The N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Synchronous rectification in SMPS
● Motor control and drive
● Battery management
● UPS
● Power tools
| VDSS | RDS(on)(TYP) | ID |
| 120V | 3.7mΩ | 160A |
