Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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160A 120V N-channel Enhancement Mode Power MOSFET DHS044N12E TO-263

The N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
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  • DHS044N12E

  • WXDH

160A 120V N-channel Enhancement Mode Power MOSFET


1 Description 

The N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 


2 Features 

● Low on resistance 

● Low gate charge 

● Fast switching 

● Low reverse transfer capacitances

● 100% single pulse avalanche energy test

● 100% ΔVDS test 


3 Applications 

● Synchronous rectification in SMPS 

● Motor control and drive

● Battery management 

● UPS 

● Power tools


VDSS RDS(on)(TYP) ID
120V 3.7mΩ 160A


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