120A 80V N-channel Enhancement Mode Power MOSFET
1 Description
This N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance
● Low gate charge
● High avalanche current
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Synchronous rectification in SMPS
● Hard switching and high speed circuit
● Power tools
● UPS
● Motor control
| VDSS |
RDS(on)(TYP) |
ID |
PACKAGE |
| 80V |
3.9mΩ |
120A |
TO-220C |
| 80V |
3.7mΩ |
120A |
TO-263 |