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8n50
Wxdh
Ad-220c
500V
8a
8a 500v N-Channel Enhancement Modus Power Mosfet
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum.
II features
● Fast Switching
● ESD improved facultatem
● humilis in resistentia (rdson≤0.9Ω)
● Minimum porta (Typ, 24nc)
● Low Reverse Transfer Capitances (Typ: 7PF)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam. ● Power SWITCH CIRCUPTURA electron SADIO et nibh.
Vdss | RDS (on) (Typ) | Id |
500V | 0,72Ω | 8a |
8a 500v N-Channel Enhancement Modus Power Mosfet
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum.
II features
● Fast Switching
● ESD improved facultatem
● humilis in resistentia (rdson≤0.9Ω)
● Minimum porta (Typ, 24nc)
● Low Reverse Transfer Capitances (Typ: 7PF)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam. ● Power SWITCH CIRCUPTURA electron SADIO et nibh.
Vdss | RDS (on) (Typ) | Id |
500V | 0,72Ω | 8a |