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F4n70
Wxdh
Ad-220f
700V
4a
4a 700v N-Channel Enhancement Modus Power Mosfet
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Rohs Standard.to-220f providet Voltage rated at 2000v RMS ab omnibus tribus terminalibus ad externum heatsink. Ad-220f seriem propinquos meos in ulna (File Ref: E252906).
II features
● Fast Switching
● ESD improved facultatem
● humilis in resistentia (rdson≤3.3Ω)
● Minimum porta (Typ: 12.7nc)
● Minimum Reverse Transfer Capitancia (Typ: 2.7pf)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam.
● Power SWITCH CIRCUPTURA electron SADIO et nibh.
Vdss | RDS (on) (Typ) | Id |
700V | 2.65Ω | 4a |
4a 700v N-Channel Enhancement Modus Power Mosfet
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Rohs Standard.to-220f providet Voltage rated at 2000v RMS ab omnibus tribus terminalibus ad externum heatsink. Ad-220f seriem propinquos meos in ulna (File Ref: E252906).
II features
● Fast Switching
● ESD improved facultatem
● humilis in resistentia (rdson≤3.3Ω)
● Minimum porta (Typ: 12.7nc)
● Minimum Reverse Transfer Capitancia (Typ: 2.7pf)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam.
● Power SWITCH CIRCUPTURA electron SADIO et nibh.
Vdss | RDS (on) (Typ) | Id |
700V | 2.65Ω | 4a |