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F5n65c
Wxdh
Ad-220f
650v
4.5a
4.5a 650v N-Channel Enhancement Modus Power Mosfet
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum.
II features
● Fast Switching
● ESD improved facultatem
● humilis in resistentia (rdson≤2.8Ω)
● Minimum portam (typical data: 14.5nc)
● Humilis Reverse Transfer Capitances (Typical: 3.5pf)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam.
● Power SWITCH CIRCUPTURA electron SADIO et nibh.
Vdss | RDS (on) (Typ) | Id |
650v | 2.4Ω | 4.5a |
4.5a 650v N-Channel Enhancement Modus Power Mosfet
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum.
II features
● Fast Switching
● ESD improved facultatem
● humilis in resistentia (rdson≤2.8Ω)
● Minimum portam (typical data: 14.5nc)
● Humilis Reverse Transfer Capitances (Typical: 3.5pf)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam.
● Power SWITCH CIRCUPTURA electron SADIO et nibh.
Vdss | RDS (on) (Typ) | Id |
650v | 2.4Ω | 4.5a |