10n80 / F10n80 / E10N80

10A 800V N-Channel Enhancement Modus Power Mosfet

I Description

Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Rohs

vexillum. 

II features

● Fast Switching

● ESD improved facultatem

● humilis in resistentia (rdson≤0.9Ω)

● Minimum porta (Typ, 65nc)

● Low Reverse Transfer Capitances (Typ: 25PF)

● C% unum pulsus Copyops Nectrix Energy Test

● C% Δvds test

III Applications

 in variis potentia switching circuitu system Miniaturization et altius efficientiam.

 potentia switch circa electronicam saburram et nibh.