(1)(8) (1)
porta
Jiangsu Donghai Semiconductor Co., Ltd
Hic es: Home » Products » MOSFET » 12V-300V N MOS » 100V/5.5mΩ/100A N-MOSFET DSD065N10L3A TO-252

loading

Share to:
facebook sharing button
Twitter sharing button
linea participatio puga
wechat sharing button
sharingin button sharing
pinterest sharing button
whatsapp sharing button
sharethis sharing button

100V/5.5mΩ/100A N-MOSFET DSD065N10L3A TO-252

Hi N-channel amplificationis modus potentiae mosfets provectus usus est ad portam fossae fossae technicae artis, si Rdson optimam et humilem portam praefecit. Quod congruit cum RoHS vexillum.
Availability:
Quantity:
inquire Add to Basket

100V/5.5mΩ/100A N-MOSFET


1 Description 

N-canale amplificationis modus potentiae mosfets usus provectae scissurae portae fossae technologiae consilio, Rdson et humilis porta praefectum praestavit. Quod congruit cum RoHS vexillum. 


2 Features 

AEC-Q101

Minimum resistente 

Pb-Free plating / Halogen-Free / RoHS obsequens

Minimum vicissim translationis capacitates 

C% unius pulsus NIVIS industria test 

C% VDS test 


III Applications 

Motor imperium ac coegi 

præcipe / officii sint altilium Management System

Synchroni Rectifier ad SMPS

  • Automotive application


VDSS RDS(on)(TYP) ID
100V 5.5mΩ 100A


Priora: 
Next: 
MOSFET
  • Jiangsu Donghai Semiconductor Co., Ltd
  • Sign up for our newsletter
  • expediret pro futuro
    signo pro nostris newsletter accipere updates recta in capsa tua
    Submit
Copyright © 2023Jiangsu Donghai Semiconductor Co., Ltd Technology by leadong.com