N-channel Enhancement Mode Power MOSFET 110A 100V DHS052N10E TO-263

N-channel Enhancement Mode Power MOSFET 110A 100V

1 Description

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 

2 Features

● Fast switching 

● Low on resistance 

● Low gate charge 

● High avalanche current 

● Low reverse transfer capacitances 

● 100% single pulse avalanche energy test 

● 100% ΔVDS test 

3 Applications

● Synchronous rectification in SMPS

● Hard switching and high speed circuit

● Power tools

● UPS 

● Motor control

VDSS	RDS(on)(TYP)	ID
100V	5.1mΩ	110A