Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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DSG031N10N3 TO-220C

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
  • DSG031N10N3

  • WXDH

100V/2.6mΩ/180A N-MOSFET

1 Description 

This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard. 

2 Features

● Low on resistance 

● Low reverse transfer capacitances 

● 100% single pulse avalanche energy test

● 100% ΔVDS test 

  • Pb-free plating/Halogen-free/RoHs compliant

3 Applications 

● Power switching applications

● DC-DC converters

● Full bridge control

100V 2.6 mΩ 180A

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