 |
| Quantity: | |
|---|---|
DSG031N10N3
WXDH
100V/2.6mΩ/180A N-MOSFET
1 Description
This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
Pb-free plating/Halogen-free/RoHs compliant
3 Applications
● Power switching applications
● DC-DC converters
● Full bridge control
| VDSS | RDS(on)(TYP) | ID |
| 100V | 2.6 mΩ | 180A |
100V/2.6mΩ/180A N-MOSFET
1 Description
This N-channel enhancement mode power MOSFET utilizes advanced Split Gate Trench technology, which provides excellent Rdson and low Gate charge at the same time. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
Pb-free plating/Halogen-free/RoHs compliant
3 Applications
● Power switching applications
● DC-DC converters
● Full bridge control
| VDSS | RDS(on)(TYP) | ID |
| 100V | 2.6 mΩ | 180A |
