Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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80A 650V Trenchstop Insulated Gate Bipolar Transistor DGC80F65M TO-247

80A 650V Trenchstop Insulated Gate Bipolar Transistor
Availability:
Quantity:
  • DGC80F65M

  • WXDH

80A 650V Trenchstop Insulated Gate Bipolar Transistor


1 Features 

Using DongHai's proprietary Trench design and advance FS technology, the 650V FS IGBT offers superior and switching performances, high avalanche ruggedness easy parallel operation 


2 Features

● FS Trench Technology, Positive temperature coefficient

● Low saturation voltage: VCE(sat), typ = 1.8V @ IC =80A and Tj = 25°C 

● Extremely enhanced avalanche capability 


3 Applications 

● Welding

● UPS

● Three-level Inverter


Vces Package Ic(Tj=100℃)
650V TO-247-3L 80A 


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