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| Quantity: | |
|---|---|
DGD600H120L2T
WXDH
EconoDUAL3
1200V
600A
600A 1200V Half bridge module
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 1.79V @ IC =600A and Tj = 25°C
● Extremely enhanced avalanche capability
3 Applications
Welding
UPS
Three-leve Inverter
AC and DC servo drive amplifier
| Type | VCE | Ic | VCEsat,Tj=25℃ | Tjop | Package |
| DGD600H120L2T | 1200V | 600A (Tj=100℃) | 1.79V (Typ) | 150℃ | EconoDUAL3 |
600A 1200V Half bridge module
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
2 Features
● FS Trench Technology, Positive temperature coefficient
● Low saturation voltage: VCE(sat), typ = 1.79V @ IC =600A and Tj = 25°C
● Extremely enhanced avalanche capability
3 Applications
Welding
UPS
Three-leve Inverter
AC and DC servo drive amplifier
| Type | VCE | Ic | VCEsat,Tj=25℃ | Tjop | Package |
| DGD600H120L2T | 1200V | 600A (Tj=100℃) | 1.79V (Typ) | 150℃ | EconoDUAL3 |
