Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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50A 1200V Half bridge IGBT module DHG50N120D 34mm

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
Availability:
Quantity:
  • DHG50N120D

  • WXDH

  • DHG50N120D

  • 34mm

  • DHG50N120D.pdf

  • 1200V

  • 50A

50A 1200V Half bridge module

1 Description 

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. 

2 Features 

  • Low gate charge 

  • Excellent switching speed 

  • Easy paralleling capability due to positive temperature Coefficient in VCEsat 

  • Tsc≥10µs 

  • Fast recovery full current anti-parallel diode 

3 Applications 

  • Welding 

  • UPS 

  • Three-leve Inverter 

  • AC and DC servo drive amplifier


Type VCE Ic VCEsat,Tj=25℃ Tjop Package
DHG50N120D 1200V 50A (Tj=100℃) 1.8V (Typ) 175℃ 34MM


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