100A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced mode power vdmosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low switching loss
● Low on resistance
● Low gate charge
● Low reverse transfer capacitance
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching applications
● Inverter management system
● Electric tools
● DC-DC converters
VDSS |
RDS(on)(TYP) |
ID |
30V |
3.3 mΩ |
100A |