Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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DGB600H120L2T

600A 1200V Medium pontis moduli
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  • DGB600H120L2T

  • WXDH

600A 1200V Medium pontis moduli

1 Description 

Hae Portae Bipolar Transistor Insulae usi progressu fossae et consilio technologiae Fieldstop, providit VCEsat et celeritate mutandi , portae humilis crimen.Quod congruit cum RoHS vexillum. 


2 Features 

  FS Trench Technology, caliditas positiva coefficientis 

  Saturatio humilis intentione: VCE(sat), typ = 1.7V @ IC = 600A et Tj = 25°C 

  valde auctus facultatem NIVIS CASUS 


III Applications 

  • Welding 

  • UPS 

  • Tres gradu Inverter 

  • AC et DC servo amplio coegi


    Type VCE I c VCEsat,Tj=25℃ Tjop sarcina
    DGB600H120L2T 1200V 600A (Tj=100℃) 1.7V (Type) 175 62MM
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