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Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
Hic es: Home » Products » IGBT » 600V-650V » 40A 650V Trenchstop Insulae Porta Bipolar Transistor G40N65D TO-3PF

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40A 650V Trenchstop Insulae Bipolar Transistor G40N65D TO-3PF

Utens DongHai fossam proprietatis designat et technologiam FS promovet, 650V FS IGBT offert superiora et
mutandi spectacula, alta NIVIS asperitas faciles parallelas operationes
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  • G40N65D

  • WXDH

40A 650V Trenchstop Insulae Bipolar Transistor


1 Descriptio Fossae proprietatis utens DongHai consilio et progressu technologiae FS, 650V FS IGBT praebet spectacula superiora et commutationes, altam NIVIS asperitatem facilem operationem parallelam. 


2 Features 

FS Trench Technology, caliditas positiva coefficientis 

Saturatio humilis intentione: VCE(sat), typ = 1.7V @ IC = 40A et Tj = 25°C 

valde auctus facultatem NIVIS CASUS


III Applications

Welding 

UPS

Tres-gradu Inverter


Vces sarcina Ic(Tj=100℃)
650V TO-220 40A 


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