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18a 500v N-Channel Enhancement Modus Power Mosfet 18N50D ad-3pn

Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching
perficientur et augendae avalanche industria. Quae secundum Radii vexillum.
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18a 500v N-Channel Enhancement Modus Power Mosfet


I Description

Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum. 


II features 

● Fast Switching 

● ESD improved facultatem 

● humilis in resistentia (rdson≤0.35Ω) 

● Minimum portam (Typ, 52nc) 

● Low Reverse Transfer Capitances (Typ: 16pf)

● C% unum pulsus Copyops Nectrix Energy Test 

● C% Δvds test


III Applications

● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam. 

● Power SWITCH CIRCUPTURA electron SADIO et nibh.

Vdss  RDS (on) (Typ) Id 
500V 0.24Ω 18a



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