 |
| Quantity: | |
|---|---|
DHS052N10/DHS052N10F/DHS052N10E/DHS052N10B/DHS052N10D
WXDH
N-channel Enhancement Mode Power MOSFET 110A 100V
1 Description
These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance
● Low gate charge
● High avalanche current
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Synchronous rectification in SMPS
● Hard switching and high speed circuit
● Power tools
● UPS
● Motor control
| VDSS | RDS(on)(TYP) | ID |
| 100V | 5.1mΩ | 110A |
N-channel Enhancement Mode Power MOSFET 110A 100V
1 Description
These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance
● Low gate charge
● High avalanche current
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Synchronous rectification in SMPS
● Hard switching and high speed circuit
● Power tools
● UPS
● Motor control
| VDSS | RDS(on)(TYP) | ID |
| 100V | 5.1mΩ | 110A |
