Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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DGB600H120L2T

600A 1200V Half bridge module
Availability:
Quantity:
  • DGB600H120L2T

  • WXDH

600A 1200V Half bridge module

1 Description 

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. 


2 Features 

  ● FS Trench Technology, Positive temperature coefficient 

  ● Low saturation voltage: VCE(sat), typ = 1.7V @ IC =600A and Tj = 25°C 

  ● Extremely enhanced avalanche capability 


3 Applications 

  • Welding 

  • UPS 

  • Three-leve Inverter 

  • AC and DC servo drive amplifier


    Type VCE Ic VCEsat,Tj=25℃ Tjop Package
    DGB600H120L2T 1200V 600A (Tj=100℃) 1.7V (Typ) 175℃ 62MM
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