Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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600A 1200V Half bridge module DGD600H120L2T EconoDUAL3 PACKAGE

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
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600A 1200V Half bridge module

1 Description 

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard. 


2 Features 

● FS Trench Technology, Positive temperature coefficient 

● Low saturation voltage: VCE(sat), typ = 1.79V @ IC =600A and Tj = 25°C 

● Extremely enhanced avalanche capability 


3 Applications 

  •  Welding 

  •  UPS 

  •  Three-leve Inverter 

  • AC and DC servo drive amplifier



  • Type VCE Ic VCEsat,Tj=25℃ Tjop Package
    DGD600H120L2T 1200V 600A (Tj=100℃) 1.79V (Typ) 150℃ EconoDUAL3
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