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DHD50N03
WXDH
TO-252B
30V
50A
50A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low Switching Loss
● Low ON Resistance(Rdson≤11mΩ)
● Low Gate Charge(Typ: 22nC)
● Low Reverse Transfer Capacitance(Typ: 130pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Applications
● Power switching applications
● Hard Switched and High Frequency Circuits
● Electric Tools
● Automotive Electronics
● Uninterruptible Power Supply.
VDSS | RDS(on)(TYP) | ID |
30V | 9mΩ | 50A |
50A 30V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low Switching Loss
● Low ON Resistance(Rdson≤11mΩ)
● Low Gate Charge(Typ: 22nC)
● Low Reverse Transfer Capacitance(Typ: 130pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test
3 Applications
● Power switching applications
● Hard Switched and High Frequency Circuits
● Electric Tools
● Automotive Electronics
● Uninterruptible Power Supply.
VDSS | RDS(on)(TYP) | ID |
30V | 9mΩ | 50A |