Availability: | |
---|---|
Quantity: | |
B4N65
WXDH
TO-251B
650V
4A
4A 650V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Features
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤2.8Ω)
● Low gate charge(Typ: 14.5nC)
● Low reverse transfer capacitances(Typ: 3.5pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
VDSS | RDS(on)(TYP) | ID |
650V | 2.4Ω | 4A |
4A 650V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhanced vdmosfets, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.
2 Features
● Fast switching
● ESD improved capability
● Low on resistance(Rdson≤2.8Ω)
● Low gate charge(Typ: 14.5nC)
● Low reverse transfer capacitances(Typ: 3.5pF)
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Used in various power switching circuit for system miniaturization and higher efficiency.
● Power switch circuit of electron ballast and adaptor.
VDSS | RDS(on)(TYP) | ID |
650V | 2.4Ω | 4A |