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DH066N06E
WXDH
TO-263
60V
110A
110A 60V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching applications
● Inverter management system
● Electric tools
● Automotive electronics
VDSS | RDS(on)(TYP) | ID |
60V | 5.7mΩ | 110A |
110A 60V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching applications
● Inverter management system
● Electric tools
● Automotive electronics
VDSS | RDS(on)(TYP) | ID |
60V | 5.7mΩ | 110A |