100V/2.2mΩ/180A N-MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
● Pb-Free plating / Halogen-Free / RoHS compliant
3 Applications
• Power switching applications
• DC-DC converters
• Full bridge control
• Automotive applications
VDSS |
RDS(on)(TYP) |
ID |
100V |
2.2 mΩ |
180A |