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D5n65-XAD
Wxdh
Ad-252b
650v
5a
N-Channel Enhancement Modus Power Mosfet 5A 650v
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum. Ad-220f providet Voltage rated at 2000v RMS ab omnibus tribus terminalibus ad externum heatsink. Ad-220f seriem propinquos meos in ulna (File Ref: E252906).
II features
● Fast Switching
● ESD improved facultatem
● humilis in resistentia (rdson≤2.4Ω)
● Minimum porta (Typ, 17.3nc)
● Minimum Reverse Transfer Capitances (Typ, 6.88pf)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam.
● Power SWITCH CIRCUPTURA electron SADIO et nibh.
Vdss | RDS (on) (Typ) | Id |
650v | 1.9Ω | 5a |
N-Channel Enhancement Modus Power Mosfet 5A 650v
I Description
Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum. Ad-220f providet Voltage rated at 2000v RMS ab omnibus tribus terminalibus ad externum heatsink. Ad-220f seriem propinquos meos in ulna (File Ref: E252906).
II features
● Fast Switching
● ESD improved facultatem
● humilis in resistentia (rdson≤2.4Ω)
● Minimum porta (Typ, 17.3nc)
● Minimum Reverse Transfer Capitances (Typ, 6.88pf)
● C% unum pulsus Copyops Nectrix Energy Test
● C% Δvds test
III Applications
● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam.
● Power SWITCH CIRCUPTURA electron SADIO et nibh.
Vdss | RDS (on) (Typ) | Id |
650v | 1.9Ω | 5a |