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DSE022N10N3 TO-263

Hi N-channel amplificationis modus potentiae mosfets provectus usus est ad portam fossae fossae technicae artis, si Rdson optimam et humilem portam praefecit. Quod congruit cum RoHS vexillum.
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  • DSE022N10N3

  • WXDH

100V/1.7mΩ/240A N-MOSFET


1 Description 

Hoc N-canale amplificationis modus potentia MOSFET provectae technologiae Spalato portae Trench utitur, quae Rdson et portam humilem simul praefectum praebet. Quod congruit cum RoHS vexillum. 


2 Features

Minimum resistente 

Minimum vicissim translationis capacitates 

C% unius pulsus NIVIS industria test

C% VDS test 

  • PB-liberum plating / Halogen-liberum / Manufacturer


III Applications 

Power switching applications

DC-DC converters

Ponte plena potestate



VDSS RDS(on)(TYP) ID
100V 1.7 mΩ 240A


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