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DGC40F65M2 TO-247

Utens DongHai fossam proprietatis designans et technologiam FS promovens, 650V FS IGBT offert superiora et mutandi spectacula, alta NIVIS asperitas faciles parallelas operationes
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40A 650V Trenchstop Insulae Bipolar Transistor


1 Description 

Utens DongHai fossam proprietatis designat et technologiam FS promovet, 650V FS IGBT offert superiores et commutationes spectaculas, altam NIVIS asperitatem facilem operationem parallelam. 


2 Features 

FS Trench Technology, caliditas positiva coefficientis 

● Saturatio humilis intentione: VCE(sat), typ = 1.85V @ IC = 40A et Tj = 25°C

valde auctus facultatem NIVIS CASUS


III Applications 

Welding 

UPS 

Tres-gradu Inverter


VDSS Vcesat,Tj=25℃ ID
650V 1.85V 40A


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