未命名 (I) (VIII) (I)
porta
Jiangsu Donghai Semiconductor Co., Ltd
You are here: In domo » Productus » Igbt » 600v, 650v » DGC40F65M2 ad CCXLVII

loading

Share est:
Facebook Sharing Button
Twitter Socius Button
Line sharing button
Weckat Sharing Button
LinkedIn Sharing Button
Pinterest Sharing Button
Whatsapp Sharing Button
Sharing Sharing Button

DGC40F65M2 ad CCXLVII

Using Donghai scriptor proprietary fossam consilio et progressus fs technology, 650v fs igbt praebet superior et switching facienda, princeps NIVIS Avalanche Ruggedenfy Securus Parallela Operatio
Availability
:
Inquiro Addere ad cartallum

40a 650V trenchstop insulatas portam bipolar Transistor


I Description 

Using Donghai scriptor proprietary fossa consilio et progressus fs technology, 650v fs igbt offert superior et switching operas, princeps NIVIS Avalanche Ruggedenfo 


II features 

● fs fossam technology, positivum temperatus coefficiens 

● humilis saturation intentione: VCE (Sat), Typ = 1.85V @ IC = 40A et TJ = XXV °

● maxime amplificata avalanche facultatem


III Applications 

● Welding 

● UPS 

● tres-gradu inverter


Vdss Vcsat, TJ = XXV ℃ Id
650v 1.85v 40a


Previous: 
Next: 
Igbt
  • Jiangsu Donghai Semiconductor Co., Ltd
  • NEWSLETTER USUS
  • Signare ad Future
    Sign nostro Newsletter ad updates recta ad Inbuxo
    Submitto
Copyright © 2023Jiangsu Donghai Semiconductor Co., Ltd Technology a leadong.com