porta
Jiangsu Donghai Semiconductor Co., Ltd
Hic es: Home » Products » MOSFET » 400V-1500V N MOS » 7A 800V N-canali Enhancement Modus Potestatis MOSFET F7N80 TO-220F

loading

Share to:
facebook sharing button
Twitter sharing button
linea participatio puga
wechat sharing button
sharingin button sharing
pinterest sharing button
whatsapp sharing button
sharethis sharing button

7A 800V N-canale Enhancement Modus Power MOSFET F7N80 TO-220F

7A 800V N-canali Enhancement Modus Power MOSFET
Availability:
Quantity:

7A 800V N-canale Enhancement Modus Power MOSFET


1 Description

Haec N-canale vdmosfets aucta, a technologia plani auto-aligna fit quae damnum conductionis minuit, emendare mutandi effectum et NIVIS energiam augere. Quod congruit cum RoHS vexillum. TO-220F praebet intentionem insulationem in 2000V RMS aestimatam ab omnibus tribus terminalibus calorum externorum. TO-220F series signa UL parere (File ref:E252906). 


2 Features 

Fast commutatione 

ESD melius facultatem 

● Minimum resistente (Rdson≤1.8Ω) 

● Praefectum portae Minimum (Typ: 33.9nC) 

Minimum contra facultates translationis (Typ: 11.2pF) 

C% unius pulsus NIVIS industria test

C% VDS test 


III Applications

● In variis potentiae mutandi circuitionibus ad systema miniaturizationis et efficientiae altioris adhibitum. 

● Potestas transiens ambitum electronico adprehensis et adaptor.


VDSS  RDS(on)(TYP) ID 
800V 1.5Ω 7A



Priora: 
Next: 
  • Sign up for our newsletter
  • expediret pro futuro
    signo pro nostro newsletter accipere updates recta in capsa tua