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Hic es: Home » Products » IGBT » 600V-650V » 60A 650V Portae Bipolar Transistor Insulae G60T65D TO-3PN

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60A 650V Portae Bipolaris Transistor Insulae G60T65D TO-3PN

Usus DongHai consilio proprietario Planari et technologiae FS provectae, 650V FS IGBT meliorem conductionem et commutationes spectaculas praebet, altam asperitatem NIVIS et operationem facilem parallelam.
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60A 650V Portae Bipolar Transistor insulatae


I Features 

Usus DongHai consilio proprietario Planari et technologiae FS provectae, 650V FS IGBT meliorem conductionem et commutationes spectaculas praebet, altam asperitatem NIVIS et operationem facilem parallelam. 


2 Features 

FS Trench Technology, caliditas positiva coefficientis 

 Saturatio humilis intentione: VCE(sat), typ = 1.85V @ IC = 60A et TC = 25°C 

valde auctus facultatem NIVIS CASUS 


III Applications 

Aircondition

Welding

UPS

Vces sarcina Ic(Tj=100℃)
650V TO-3PN 60A 


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