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4a 600v N-Channel Enhancement Modus Power Mosfet B4N60

4a 600v N-Channel Enhancement Modus Power Mosfet
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4a 600v N-Channel Enhancement Modus Power Mosfet


I Description

Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum. 


II features 

● Fast Switching 

● ESD improved facultatem 

● humilis in resistentia (rdson≤2.5Ω) 

● Minimum porta (Typ, 14.5nc) 

● Low Reverse Transfer Capitances (Typ, 4.0pf)

● C% unum pulsus Copyops Nectrix Energy Test 

● C% Δvds test 


III Applications 

● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam. 

● Power SWITCH CIRCUS of Electron Salker

Vdss  RDS (on) (Typ) Id 
600v 2.1Ω 4a



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4a 600v N-Channel Enhancement Modus Power Mosfet
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