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Hic es: Home » Products » IGBT » 600V-650V » 30A 650V Trenchstop Insulae Portus Bipolar Transistor DGF30F65M2 TO-220F

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30A 650V Trenchstop Insulae Bipolar Transistor DGF30F65M2 TO-220F

Utens DongHai fossam proprietatis designat et technologiam FS promovet, 650V FS IGBT offert superiora et mutandi spectacula, alta NIVIS asperitas faciles parallelas operationes
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30A 650V Trenchstop Insulae Bipolar Transistor


I Features 

Utens DongHai fossam proprietatis designat et technologiam FS promovet, 650V FS IGBT offert superiora et mutandi opera, alta NIVIS asperitas facilem operationem parallelam. 


2 Features 

FS Trench Technology, caliditas positiva coefficientis

Saturatio humilis intentione: VCE(sat), typ = 1.9V @ IC = 30A et Tj = 25°C

valde auctus facultatem NIVIS CASUS


III Applications

Welding 

UPS 

Tres-gradu Inverter


Vces sarcina Ic(Tj=100℃)
650V TO-220F 30A 


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