20A 600v N-Channel Enhancement Modus Power Mosfet F20n60 ad-220F

20A 600v N-Channel Enhancement Modus Power Mosfet

I Description

Hi Silicon N-Channel Enhanced VDMosfets sunt adeptus ab auto-Aligned Planar Technology quod reducere ad conduction damnum, amplio Switching perficientur et augendae ad-220f Energy.The Package est ad-220f. Quae secundum Radii vexillum. 

II features

● Fast Switching 

● humilis super resistentia (rdson≤0.45Ω) 

● Minimum porta (Typ, 61nc) 

● Minimum Reverse Transfer Capitances (Typ, 20pf) 

● C% unum pulsus Copyops Nectrix Energy Test 

● C% Δvds test 

III application 

● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam. 

● Power SWITCH CIRCUM ADAPTER et patina.