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12A 650v N-Channel Enhancement Modus Power Mosfet 12n65 ad-220c

Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching
perficientur et augendae avalanche industria. Quae secundum Radii vexillum.
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12A 650v N-Channel Enhancement Modus Power Mosfet


I Description

Hi n-alveo amplificata Vdmosfets, est adeptus per se-aligned Planar technology quod reducere ad conduction damnum, amplio switching perficientur et augendae avalanche industria. Quae secundum Radii vexillum. 


II features 

● Fast Switching 

● ESD improved facultatem 

● humilis super resistentia (rdson≤0.8Ω) 

● Minimum porta (Typ, 32nc) 

● Low Reverse Transfer Capitances (Typ, 7.0pf) 

● C% unum pulsus Copyops Nectrix Energy Test 

● C% Δvds test 


III Applications 

● usus est in variis virtute switching circuitu system miniaturization et altius efficientiam. 

● Power SWITCH CIRCUS of Electron Salker

Vdss  RDS (on) (Typ) Id 
650v 0.66 Ω 12A



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