porta
Jiangsu Donghai Semiconductor Co., Ltd
Hic es: Home » Products » MOSFET » 12V-300V N MOS » 100A 30V N-canali Enhancement Modus Potestatis MOSFET TO-252B 30H10K

loading

Share to:
facebook sharing button
Twitter sharing button
linea participatio puga
wechat sharing button
sharingin button sharing
pinterest sharing button
whatsapp sharing button
sharethis sharing button

100A 30V N-canale Enhancement Modus Power MOSFET TO-252B 30H10K

100A 30V N-canale Enhancement Modus Power MOSFET
Availability:
Quantity:

100A 30V N-canale Enhancement Modus Power MOSFET


1 Description

Hi N-canale auctus vdmosfets usi sunt, progresso consilio technologiae fossae, Rdson et humilis portae praefectum praestans. Quod congruit cum RoHS vexillum. 


2 Features 

Minimum commutatione damnum 

● Minimum resistente (Rdson≤5.5mΩ) 

Praefectum portae Minimum (Typ: 43nC) 

Minimum contra capacitatem translationis (Typ: 215pF) 

C% unius pulsus NIVIS industria test

C% VDS test 


III Applications

Power switching applications 

Inverter systema procuratio 

Electric instrumenta 

Automotive electronics



VDSS RDS(on) (TYP) ID 
30V 3.8mΩ 100A



Priora: 
Next: 
  • Sign up for our newsletter
  • expediret pro futuro
    signo pro nostris newsletter accipere updates recta in capsa tua