| Availability: | |
|---|---|
| Quantity: | |
DH3205A
WXDH
TO-220C
68V
100A
| VDSS | RDS(on)(TYP) | ID |
| 68V | 6.0mΩ | 100A |
This N-channel MOSFET is engineered to handle power switching with precision and efficiency. Key features include:
- Low On-Resistance (RDS(on)): Ensures minimal heat dissipation and enhances energy efficiency in power applications.
- Low Gate Charge: Minimizes switching losses, making the device highly efficient, especially in fast-switching environments like DC-DC converters.
- Fast Switching: This MOSFET is ideal for high-speed applications, with quick turn-on and turn-off times.
- Wide Operating Range: Capable of handling high voltages and currents while maintaining stable operation.
The N-channel Enhancement Mode Power MOSFET is ideal for use in:
- Power Switching Applications: Commonly used in switching power supplies where energy efficiency is critical.
- DC-DC Converters: Helps in the conversion of voltage levels in electronic circuits, ensuring fast response and low energy loss.
- Full Bridge Control Circuits: Perfect for motor control systems where rapid switching and efficiency are needed to drive various loads.
- Automotive Electronics: This MOSFET can be used in automotive power management systems, enhancing efficiency in electric vehicle control circuits.
- Energy Efficiency: The low RDS(on) and gate charge significantly reduce power losses, making it ideal for energy-sensitive applications.
- High Durability: With advanced trench technology and materials, this MOSFET provides reliable performance even under harsh conditions, ensuring long-term usage in industrial environments.
- Versatility: Whether used in small-scale electronics or larger industrial equipment, this MOSFET adapts well to varying demands, making it a versatile choice for engineers working on power systems.
- RoHS Compliance: This ensures that the MOSFET is environmentally friendly, adhering to regulations for hazardous substances, making it safe for use in various applications.
By incorporating this N-channel Enhancement Mode Power MOSFET for Power Switching into your designs, you can achieve superior switching performance, efficiency, and reliability, especially for demanding power management applications in modern electronic systems.
| VDSS | RDS(on)(TYP) | ID |
| 68V | 6.0mΩ | 100A |
This N-channel MOSFET is engineered to handle power switching with precision and efficiency. Key features include:
- Low On-Resistance (RDS(on)): Ensures minimal heat dissipation and enhances energy efficiency in power applications.
- Low Gate Charge: Minimizes switching losses, making the device highly efficient, especially in fast-switching environments like DC-DC converters.
- Fast Switching: This MOSFET is ideal for high-speed applications, with quick turn-on and turn-off times.
- Wide Operating Range: Capable of handling high voltages and currents while maintaining stable operation.
The N-channel Enhancement Mode Power MOSFET is ideal for use in:
- Power Switching Applications: Commonly used in switching power supplies where energy efficiency is critical.
- DC-DC Converters: Helps in the conversion of voltage levels in electronic circuits, ensuring fast response and low energy loss.
- Full Bridge Control Circuits: Perfect for motor control systems where rapid switching and efficiency are needed to drive various loads.
- Automotive Electronics: This MOSFET can be used in automotive power management systems, enhancing efficiency in electric vehicle control circuits.
- Energy Efficiency: The low RDS(on) and gate charge significantly reduce power losses, making it ideal for energy-sensitive applications.
- High Durability: With advanced trench technology and materials, this MOSFET provides reliable performance even under harsh conditions, ensuring long-term usage in industrial environments.
- Versatility: Whether used in small-scale electronics or larger industrial equipment, this MOSFET adapts well to varying demands, making it a versatile choice for engineers working on power systems.
- RoHS Compliance: This ensures that the MOSFET is environmentally friendly, adhering to regulations for hazardous substances, making it safe for use in various applications.
By incorporating this N-channel Enhancement Mode Power MOSFET for Power Switching into your designs, you can achieve superior switching performance, efficiency, and reliability, especially for demanding power management applications in modern electronic systems.




