N-channel Enhancement Mode Power MOSFET 68A 100V
1 Description
These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Low on resistance
● Low gate charge
● Fast switching
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Power switching applications
● Inverter management system
● Electric tools
● Automotive electronics
VDSS |
RDS(on)(TYP) |
ID |
100V |
11mΩ |
68A |