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DHS052N10D
WXDH
DHS052N10D
TO-252B
100V
110A
N-channel Enhancement Mode Power MOSFET 110A 100V
1 Description
These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance
● Low gate charge
● High avalanche current
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Synchronous rectification in SMPS
● Hard switching and high speed circuit
● Power tools
● UPS
● Motor control
VDSS | RDS(on)(TYP) | ID |
100V | 5.1mΩ | 110A |
N-channel Enhancement Mode Power MOSFET 110A 100V
1 Description
These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance
● Low gate charge
● High avalanche current
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Synchronous rectification in SMPS
● Hard switching and high speed circuit
● Power tools
● UPS
● Motor control
VDSS | RDS(on)(TYP) | ID |
100V | 5.1mΩ | 110A |