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| Quantity: | |
|---|---|
MUR2040CT
WXDH
TO-220C
400V
20A
Fast recovery diode 20A 400V
1 Description
20A, 400V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink.
2 Features
Low power loss,
high efficiency Low forward voltage,
high current capability High surge capacity
Super fast recovery times
high voltage
3 Applications
Switching Power Supply
Power Switching Circuits
General Purpose
| VBR | VF(single)(MAX) | IF(AV)(single) |
| 400V | 1.4V | 10A |
Fast recovery diode 20A 400V
1 Description
20A, 400V Ultrafast Diodes They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction. These devices are intended for use as energy steering/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and ultrafast recovery with soft recovery characteristics minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistor TO-220F provides insulation voltage rated at 2000V RMS from all three terminals to external heatsink.
2 Features
Low power loss,
high efficiency Low forward voltage,
high current capability High surge capacity
Super fast recovery times
high voltage
3 Applications
Switching Power Supply
Power Switching Circuits
General Purpose
| VBR | VF(single)(MAX) | IF(AV)(single) |
| 400V | 1.4V | 10A |
