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| Quantity: | |
|---|---|
DSP007N03LA
WXDH
35V/0.58mΩ/355A N-MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● AEC-Q101 qualified
● Low on resistance
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
Pb-Free plating / Halogen-Free / RoHS compliant
3 Applications
● Power switching applications
● DC-DC converters
● Full bridge control
● Automotive applications
| VDSS | RDS(on)(TYP) | ID |
| 35V | 0.58mΩ | 355A |
35V/0.58mΩ/355A N-MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● AEC-Q101 qualified
● Low on resistance
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
Pb-Free plating / Halogen-Free / RoHS compliant
3 Applications
● Power switching applications
● DC-DC converters
● Full bridge control
● Automotive applications
| VDSS | RDS(on)(TYP) | ID |
| 35V | 0.58mΩ | 355A |
