Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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DSP007N03LA DFN5X6

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
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  • DSP007N03LA

  • WXDH

35V/0.58mΩ/355A N-MOSFET


1 Description 

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 


2 Features 

● AEC-Q101 qualified

● Low on resistance 

● Low reverse transfer capacitances

● 100% single pulse avalanche energy test

● 100% ΔVDS test 

  • Pb-Free plating / Halogen-Free / RoHS compliant


3 Applications 

● Power switching applications

● DC-DC converters

● Full bridge control

● Automotive applications



VDSSRDS(on)(TYP)ID
35V0.58mΩ355A


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