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DGC40C120M2T

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
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Description

These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.

Features

ROUM Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness.

It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters.

● Low gate charge

● Excellent switching speed

● Easy paralleling capability due to positive temperature

● Coefficient in VCEsat

● Tsc≥10μs

● Fast recovery full current anti-parallel diode

● Low VCEsat

Applications

● Welding

● UPS

● Three-leve Inverter

● AC and DC servo drive amplifier


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DGC40C120M2T
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