 |
| Quantity: | |
|---|---|
DHS065N10P
WXDH
HS065N10P
DFN5X6
100V
80A
80A 100V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance
● Low gate charge
● High avalanche current
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Synchronous rectification in SMPS
● Hard switching and high speed circuit
● Power tools
● UPS
● Motor control
| VDSS | RDS(on)(TYP) | ID |
| 100V | 6.5mΩ | 80A |
80A 100V N-channel Enhancement Mode Power MOSFET
1 Description
These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
2 Features
● Fast switching
● Low on resistance
● Low gate charge
● High avalanche current
● Low reverse transfer capacitances
● 100% single pulse avalanche energy test
● 100% ΔVDS test
3 Applications
● Synchronous rectification in SMPS
● Hard switching and high speed circuit
● Power tools
● UPS
● Motor control
| VDSS | RDS(on)(TYP) | ID |
| 100V | 6.5mΩ | 80A |
