3-Level NPC Inverter Module
1 Description
These Insulated Gate Bipolar Transistor used advanced trench and Fieldstop technology design, provided excellent VCEsat and switching speed ,low gate charge. Which accords with the RoHS standard.
2 Features
Higher System Efficiency
Reduced Cooling Requirements
Low Conduction Losses Over Temperature
Neutral Point Clamped Three-Level Inverter Module
Low Inductive Layout
Solderable Pins
3 Applications
| Type |
VCE |
Ic |
| DGQ450C65M2T |
650V |
270A |