Jiangsu Donghai Semiconductor Co., Ltd
Jiangsu Donghai Semiconductor Co., Ltd
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205A 85V N-channel Enhancement Mode Power MOSFET DHS025N88 TO-263

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
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205A 85V N-channel Enhancement Mode Power MOSFET


1 Description 

These N-channel enhancement mode power mosfets used advanced splite gate trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. 


2 Features 

● Fast switching 

● Low on resistance 

● Low gate charge 

● High avalanche current 

● Low reverse transfer capacitances 

● 100% single pulse avalanche energy test 

● 100% ΔVDS test 


3 Applications 

● Synchronous rectification in SMPS 

● Hard switching and high speed circuit 

● Power tools

● UPS 

● Motor control

VDSS RDS(on)(TYP) ID
85V 2.5mΩ 205A


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